US 12,438,101 B2
Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device
Junya Ishizaki, Takasaki (JP)
Assigned to SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
Appl. No. 17/928,308
Filed by SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
PCT Filed Jun. 8, 2021, PCT No. PCT/JP2021/021655
§ 371(c)(1), (2) Date Nov. 29, 2022,
PCT Pub. No. WO2022/004292, PCT Pub. Date Jan. 6, 2022.
Claims priority of application No. 2020-115665 (JP), filed on Jul. 3, 2020.
Prior Publication US 2023/0215817 A1, Jul. 6, 2023
Int. Cl. H01L 23/00 (2006.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/70 (2025.01)
CPC H01L 23/562 (2013.01) [H10F 71/1272 (2025.01); H10F 71/139 (2025.01); H10F 77/1248 (2025.01); H10F 77/703 (2025.01); H10F 77/707 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A bonded semiconductor light-receiving device comprising:
an epitaxial layer to serve as a device-functional layer; and
a support substrate made of a material different from that of the device-functional layer and bonded to the epitaxial layer via a bonding material layer,
wherein the device-functional layer has a bonding surface comprising an uneven pattern formed thereon, and
wherein the device-functional layer comprises at least one layer made of Inx(GayAl1-y)1-xAs (0.4≤x≤0.6, 0≤y≤1), and
the layer made of Inx(GayAl1-y)1-xAs has a thickness of 0.1 μm or more.