US 12,438,099 B2
Semiconductor device and method of forming EMI shielding material in two-step process to avoid contaminating electrical connector
ChangOh Kim, Incheon (KR); JinHee Jung, Incheon (KR); and OMin Kwon, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Jul. 13, 2022, as Appl. No. 17/812,339.
Prior Publication US 2024/0021536 A1, Jan. 18, 2024
Int. Cl. H01L 23/552 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/49811 (2013.01); H01L 23/66 (2013.01); H01L 2223/6677 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a substrate;
depositing an encapsulant over a first surface of the substrate;
disposing an electrical connector over the first surface of the substrate outside the encapsulant;
disposing a first shielding material over a portion of a surface of the encapsulant and less than an entirety of the surface of the encapsulant and without disposing the first shielding material over the electrical connector;
disposing a cover over the electrical connector with separation between the cover and encapsulant; and
disposing a second shielding material over the encapsulant, wherein the cover prevents the second shielding material from reaching the electrical connector.