US 12,438,089 B2
Techniques, methods, and structures for rapid and efficient intercalation-doping of large-area multi-layered graphene sheets for transparent conductor applications, including solar cells and displays
Kaustav Banerjee, Goleta, CA (US); and Brian Cronquist, Klamath Falls, OR (US)
Assigned to Destination 2D Inc., San Jose, CA (US)
Filed by Destination 2D Inc., Milpitas, CA (US)
Filed on Feb. 20, 2025, as Appl. No. 19/059,193.
Application 19/059,193 is a continuation of application No. 18/744,533, filed on Jun. 14, 2024.
Claims priority of provisional application 63/618,862, filed on Jan. 8, 2024.
Prior Publication US 2025/0226321 A1, Jul. 10, 2025
Int. Cl. H01L 23/532 (2006.01); C01B 32/194 (2017.01)
CPC H01L 23/53276 (2013.01) [C01B 32/194 (2017.08); H01L 23/53295 (2013.01); C01B 2204/22 (2013.01); C01P 2002/08 (2013.01); C01P 2004/20 (2013.01); C01P 2006/40 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A conducting thin film structure or pattern which facilitates the insertion of dopant atoms, ions, or molecules into layered 2D materials, the film structure comprising:
a layered 2D material,
an electrically isolative material,
wherein said electrically isolative material is disposed below said layered 2D material,
wherein said layered 2D material is multilayered graphene,
wherein said layered 2D material comprises slots,
wherein said slots comprise etched regions where said layered 2D material is at least partially etched away,
wherein said etched regions comprise a width greater than 0.5 nm and less than 1 meter,
wherein said layered 2D material is intercalation doped with at least one dopant,
wherein said at least one dopant comprises at least one intercalation doping agent,
wherein said at least one intercalation doping agent is either p-type or n-type,
wherein a first portion of said layered 2D material is doped p-type, and
wherein a second portion of said layered 2D material is doped n-type.