US 12,438,086 B2
Semiconductor package and method of forming the same with dielectric layer disposed between protective mold structure and stepped structure of side portion of semiconductor die
Cheng-Tar Wu, Chengdu (CN)
Assigned to Chengdu ECHINT Technology Co., Ltd., West Chengdu (CN)
Filed by CHENGDU ESWIN SYSTEM IC CO., LTD., Chengdu (CN)
Filed on Jun. 24, 2022, as Appl. No. 17/848,779.
Claims priority of application No. 202210319405.6 (CN), filed on Mar. 29, 2022.
Prior Publication US 2023/0317613 A1, Oct. 5, 2023
Int. Cl. H01L 23/532 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/53204 (2013.01) [H01L 23/3107 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a conductive material disposed in electrical contact with a semiconductor die;
a protective mold structure disposed on the semiconductor die; and
a dielectric layer disposed on the semiconductor die and between the protective mold structure and the conductive material,
wherein the dielectric layer is disposed on a top portion of the semiconductor die and on a stepped structure including a first step etched in a side portion of the semiconductor die, and
wherein the dielectric layer is disposed between the protective mold structure and the stepped structure of the side portion of the semiconductor die.