US 12,438,085 B2
Via to backside power rail through active region
Sagarika Mukesh, Albany, NY (US); Nikhil Jain, Albany, NY (US); Devika Sarkar Grant, Amsterdam, NY (US); Ruilong Xie, Niskayuna, NY (US); Kisik Choi, Watervliet, NY (US); and Prabudhya Roy Chowdhury, Albany, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on May 11, 2022, as Appl. No. 17/662,874.
Prior Publication US 2023/0369220 A1, Nov. 16, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10D 30/67 (2025.01); H10D 62/17 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 62/10 (2025.01)
CPC H01L 23/5286 (2013.01) [H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H10D 30/6757 (2025.01); H10D 62/378 (2025.01); H10D 64/254 (2025.01); H10D 84/0149 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 62/121 (2025.01)] 25 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first source/drain and a second source/drain of a semiconductor device;
a first source/drain contact including a first portion and a second portion, wherein the first portion of the first source/drain contact is located directly atop the first source/drain, wherein the second portion of the first source/drain contact extends vertically past the first source/drain, and wherein the first source/drain is in direct contact with three different sides of a first section of the second portion of the first source/drain contact.