US 12,438,084 B2
Dual-metal ultra thick metal (UTM) structure
Hsueh-Chung Chen, Cohoes, NY (US); Yann Mignot, Slingerlands, NY (US); Chi-Chun Liu, Altamont, NY (US); Mary Claire Silvestre, Clifton Park, NY (US); and Jennifer Oakley, Cohoes, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 13, 2021, as Appl. No. 17/548,773.
Prior Publication US 2023/0187350 A1, Jun. 15, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 21/76877 (2013.01); H01L 23/53238 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a conductive line disposed within a dielectric layer;
a metal layer disposed over and in direct contact with the conductive line, wherein an entirety of a bottommost surface of the metal layer directly contacts an entirety of a topmost surface of the conductive line; and
a metallization layer disposed over the metal layer such that a protruding segment of the metal layer acts as an interface between the conductive line and the metallization layer.