US 12,438,082 B2
Package structures and method of forming the same
Chen-Hua Yu, Hsinchu (TW); and An-Jhih Su, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 12, 2024, as Appl. No. 18/411,930.
Application 18/411,930 is a division of application No. 17/322,004, filed on May 17, 2021, granted, now 11,908,795.
Application 15/728,211 is a division of application No. 14/935,160, filed on Nov. 6, 2015, granted, now 9,786,599, issued on Oct. 10, 2017.
Application 17/322,004 is a continuation of application No. 16/222,122, filed on Dec. 17, 2018, granted, now 11,011,464, issued on May 18, 2021.
Application 16/222,122 is a continuation of application No. 15/728,211, filed on Oct. 9, 2017, granted, now 10,157,835, issued on Dec. 18, 2018.
Claims priority of provisional application 62/208,436, filed on Aug. 21, 2015.
Prior Publication US 2024/0153872 A1, May 9, 2024
Int. Cl. H01L 23/528 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 23/498 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/76877 (2013.01); H01L 23/481 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 23/49816 (2013.01); H01L 23/5386 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/19 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83101 (2013.01); H01L 2224/92244 (2013.01); H01L 2224/97 (2013.01); H01L 2924/18162 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first conductive pillar over and electrically coupled to a first die;
attaching a second die over the first die;
encapsulating the first die, the second die, and the first conductive pillar with an encapsulant;
forming a first redistribution structure over the second die, the first conductive pillar, and the encapsulant, the forming the first redistribution structure comprising:
forming a dielectric layer over the second die, the first conductive pillar, and the encapsulant;
forming a first via in the dielectric layer and on the first conductive pillar;
forming a first metallization pattern on the first via, a sidewall of the first metallization pattern directly overlying the first conductive pillar, the sidewall of the first metallization pattern being laterally outside of the first via; and
forming a second metallization pattern at a same level as the first metallization pattern, a sidewall of the second metallization pattern directly overlying the first conductive pillar.