| CPC H01L 23/5226 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/563 (2013.01); H01L 23/31 (2013.01); H01L 24/14 (2013.01)] | 6 Claims |

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1. An electronic structure, comprising:
an electronic body including a first side and a second side opposite to each other, wherein the electronic body includes a base of silicon material and a circuit portion formed on the base, and edges of the base are aligned with edges of the circuit portion, such that the base defines the second side, and the circuit portion defines the first side, wherein the base includes a plurality of conductive through silicon vias as conductive vias electrically connected with the circuit portion and exposed from the second side, wherein the circuit portion includes at least one passivation layer being in direct contact with the base and a circuit layer bonded to the passivation layer and electrically connected with the conductive vias, and wherein the conductive vias are free from extending into the passivation layer, wherein the conductive vias are in direct contact with the circuit layer;
a plurality of metal pillars as first conductors formed on the first side of the electronic body and directly electrically connected with the circuit portion in the electronic body;
a plurality of metal pillars as second conductors formed on the second side of the electronic body and directly electrically connected with the conductive vias of the base in the electronic body;
a first insulating layer formed on the first side of the electronic body and encapsulating the first conductors; and
a second insulating layer formed on the second side of the electronic body and encapsulating the second conductors,
wherein the first conductors are free from contact with the first side defined by the circuit portion, and the first insulating layer is in direct contact with the first side defined by the circuit portion,
wherein the second conductors and the second insulating layer are in direct contact with the second side defined by the base.
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