US 12,438,070 B2
Semiconductor device and method for manufacturing semiconductor device
Koichi Tanaka, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Nov. 23, 2022, as Appl. No. 18/058,436.
Claims priority of application No. 2022-061965 (JP), filed on Apr. 1, 2022.
Prior Publication US 2023/0317578 A1, Oct. 5, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/535 (2006.01)
CPC H01L 23/49811 (2013.01) [H01L 21/4842 (2013.01); H01L 21/4853 (2013.01); H01L 23/535 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating substrate having a wiring pattern in a surface layer thereof; and
a terminal electrode having a bag-shaped internal space with a terminal electrode tip aperture, wherein
the terminal electrode is grounded in a freestanding state by mating with the wiring pattern.