US 12,438,048 B2
Redistribution lines with protection layers and method forming same
Ming-Da Cheng, Taoyuan (TW); Wen-Hsiung Lu, Tainan (TW); Chin Wei Kang, Tainan (TW); Yung-Han Chuang, Tainan (TW); Lung-Kai Mao, Kaohsiung (TW); and Yung-Sheng Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 6, 2024, as Appl. No. 18/655,989.
Application 18/655,989 is a continuation of application No. 18/338,095, filed on Jun. 20, 2023, granted, now 12,009,256.
Application 18/338,095 is a continuation of application No. 17/809,957, filed on Jun. 30, 2022, granted, now 11,721,579, issued on Aug. 8, 2023.
Application 17/809,957 is a continuation of application No. 17/085,619, filed on Oct. 30, 2020, granted, now 11,387,143, issued on Jul. 12, 2022.
Claims priority of provisional application 63/030,637, filed on May 27, 2020.
Prior Publication US 2024/0290656 A1, Aug. 29, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/76885 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76852 (2013.01); H01L 21/76871 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/32 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first dielectric layer;
a redistribution line comprising a portion over the first dielectric layer, wherein the redistribution line comprises:
a metal seed layer;
a first conductive feature over the metal seed layer, wherein the metal seed layer comprises an extension portion vertically misaligned from the first conductive feature; and
a protection layer comprising:
a top portion over and contacting the first conductive feature, wherein the top portion extends laterally beyond respective edges of the first conductive feature; and
a sidewall portion on a sidewall of the first conductive feature, wherein the sidewall portion contacts a top surface of the extension portion of the metal seed layer; and
a second conductive feature over and contacting the protection layer.