US 12,438,047 B2
Double patterning with selectively deposited spacer
Chanro Park, Clifton Park, NY (US); Hseuh-Chung Chen, Cohoes, NY (US); Koichi Motoyama, Shatin (HK); Kenneth Chun Kuen Cheng, Boxborough, MA (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 18, 2021, as Appl. No. 17/555,420.
Prior Publication US 2023/0197511 A1, Jun. 22, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76885 (2013.01) [H01L 21/76837 (2013.01); H01L 21/7684 (2013.01); H01L 21/7685 (2013.01); H01L 21/76865 (2013.01); H01L 21/76883 (2013.01); H01L 23/5283 (2013.01)] 20 Claims
OG exemplary drawing
 
16. A structure comprising:
a first liner layer;
a first metal line directly on top of the first liner layer;
a second liner layer;
a second metal line directly on top of the second liner layer; and
an interlayer dielectric between and directly contacting the first metal line and the second metal line,
wherein a top surface of the first metal line is flush with a top surface of the second metal line,
wherein a bottom surface of the first metal line is above a bottom surface of the second metal line.