US 12,438,044 B2
Methods and apparatus for seam reduction or elimination
Yixiong Yang, Santa Clara, CA (US); Seshadri Ganguli, Sunnyvale, CA (US); Srinivas Gandikota, Santa Clara, CA (US); Yong Yang, Mountain View, CA (US); Jacqueline S. Wrench, San Jose, CA (US); and Luping Li, Santa Clara, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Sep. 30, 2021, as Appl. No. 17/490,530.
Claims priority of provisional application 63/086,994, filed on Oct. 2, 2020.
Prior Publication US 2022/0108916 A1, Apr. 7, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/477 (2006.01)
CPC H01L 21/76846 (2013.01) [H01L 21/28568 (2013.01); H01L 21/477 (2013.01); H01L 21/7685 (2013.01); H01L 21/76865 (2013.01); H01L 21/76867 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method of forming a contact structure in a semiconductor device having a feature, comprising:
forming a conformal barrier layer over a top surface of the semiconductor device, along sidewalls and a bottom of the feature, wherein the conformal barrier layer is TIN;
forming a wetting layer over the conformal barrier layer by PVD deposition of a Ti layer over the conformal barrier layer, followed by nitridation of the Ti layer using a nitrogen containing precursor in the presence of a plasma to form the wetting layer wherein a lower portion of the wetting layer is Ti, and only an upper portion of the wetting layer comprises TIN; and
forming a metal layer comprising at least about 80% aluminum (Al) by weight over the wetting layer over the top surface, along the sidewalls, and the bottom of the feature by chemical vapor deposition at a temperature from about 100° C. to about 300° C. without annealing, wherein the metal layer disposed within the feature does not include a seam and/or voids.