US 12,438,043 B2
Semiconductor structure with staggered selective growth
Zhi-Chang Lin, Hsinchu County (TW); Wei-Hao Wu, Hsinchu (TW); and Teng-Chun Tsai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 10, 2024, as Appl. No. 18/738,390.
Application 18/738,390 is a continuation of application No. 17/099,564, filed on Nov. 16, 2020, granted, now 12,009,253.
Application 17/099,564 is a continuation of application No. 16/366,984, filed on Mar. 27, 2019, granted, now 10,840,133, issued on Nov. 17, 2020.
Claims priority of provisional application 62/737,279, filed on Sep. 27, 2018.
Prior Publication US 2024/0332073 A1, Oct. 3, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H10D 30/62 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H01L 21/76835 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02304 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76837 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H10D 30/6219 (2025.01); H10D 64/511 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first via feature and a second via feature disposed on a semiconductor substrate; and
a staggered dielectric feature spans between a first edge of the first via feature and a second edge of the second via feature, wherein
the staggered dielectric feature includes a plurality of first dielectric layers and a plurality of second dielectric layers being interdigitated,
the first dielectric layers include a first dielectric material and the second dielectric layers include a second dielectric material being different from the first dielectric material,
each of the first dielectric layers continuously extends from the first edge to the second edge, and
each of the second dielectric layers continuously extends from the first edge to the second edge.