US 12,438,039 B2
Air gap in beol interconnect
Ashim Dutta, Clifton Park, NY (US); Son Nguyen, Schenectady, NY (US); Matthew T. Shoudy, Guilderland, NY (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Mar. 17, 2023, as Appl. No. 18/185,481.
Prior Publication US 2024/0312834 A1, Sep. 19, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 21/76843 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/5329 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first back end of line (BEOL) layer, the first BEOL layer comprising a first signal line and a second signal line; and
a conformal dielectric surrounding vertical sidewalls of each of the first signal line and the second signal line;
an air gap between the first signal line and the second signal line,
wherein a vertical side boundary of the air gap is a vertical side surface of the conformal dielectric.