US 12,438,036 B2
Method for manufacturing a SOI or SiGeOI type semiconductor-on-insulator substrate by BESOI and structure for manufacturing such a substrate
Shay Reboh, Grenoble (FR); and Virginie Loup, Grenoble (FR)
Assigned to COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Filed on Jul. 20, 2022, as Appl. No. 17/813,860.
Claims priority of application No. 2107984 (FR), filed on Jul. 23, 2021.
Prior Publication US 2023/0025306 A1, Jan. 26, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/76256 (2013.01) [H01L 21/30604 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor-on-insulator substrate by Bonded and Etch back Silicon on Insulator (BESOI) comprising the following steps:
a) provide a structure successively comprising:
a first substrate made of silicon, comprising a first main face and a second main face,
a first stopping layer made of SiGe having a first thickness and an atomic percentage of Ge lower than or equal to 30%, the first stopping layer being in contact with the second main face of the first substrate,
an intermediate layer made of silicon or of SiGe, the atomic percentage of Ge of the intermediate layer being lower by at least 10% than the atomic percentage of Ge of the first stopping layer,
a second stopping layer made of SiGe having a second thickness smaller than or equal to 20 nm, the second thickness being smaller than the first thickness of the first layer, the second stopping layer having an atomic percentage of Ge higher than or equal to 20%, the atomic percentage of Ge of the intermediate layer being lower by at least 10% than the atomic percentage of Ge of the second stopping layer,
optionally, an active area formed by an active layer made of silicon or by a stack of active layers comprising at least one layer made of silicon and at least one layer made of SiGe,
a dielectric layer,
a second substrate,
b) thin the first substrate made of silicon, from the first main face, so as to remove a first portion of the first substrate and leave a second portion of the first substrate,
c) successively remove:
the second portion of the first substrate, up to the second main face of the first substrate, so as to reach the first stopping layer,
the first stopping layer,
the intermediate layer,
optionally, the second stopping layer, subject to which a semiconductor-on-insulator substrate is obtained comprising a substrate covered by the dielectric layer and the active area or a substrate covered by the dielectric layer and the second stopping layer made of SiGe.