US 12,438,017 B2
Electromigration evaluation methodology with consideration of thermal and signal effects
Hsien Yu Tseng, Hsinchu (TW); and Sheng-Feng Liu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 26, 2024, as Appl. No. 18/754,815.
Application 17/407,876 is a division of application No. 16/563,799, filed on Sep. 6, 2019, granted, now 11,107,714, issued on Aug. 31, 2021.
Application 18/754,815 is a continuation of application No. 18/308,187, filed on Apr. 27, 2023, granted, now 12,027,391.
Application 18/308,187 is a continuation of application No. 17/407,876, filed on Aug. 20, 2021, granted, now 11,658,049, issued on May 23, 2023.
Claims priority of provisional application 62/753,533, filed on Oct. 31, 2018.
Prior Publication US 2024/0347357 A1, Oct. 17, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/67 (2006.01); G06F 30/367 (2020.01); G06F 30/398 (2020.01); G06F 119/08 (2020.01)
CPC H01L 21/67248 (2013.01) [G06F 30/367 (2020.01); G06F 30/398 (2020.01); G06F 2119/08 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A system for evaluating a heat sensitive structure of an integrated circuit design comprising:
a memory configured for maintaining data corresponding to an integrated circuit design layout, thermal data, process data, and operational parameters corresponding to the integrated circuit design;
a processor configured for accessing the memory, wherein the processor is configured to:
identify a target region having a nominal temperature Tnom;
identify a first heat generating structure having a first impact area that encompasses a first portion of the target region; and
identify a second heat generating structure having a second impact area that encompasses a second portion of the target region;
calculate a ΔTh1 for the target region induced by thermal coupling between the first heat generating structure and the first portion of the target region;
calculate a ΔTh2 for the target region induced by thermal coupling between the second heat generating structure and the second portion of the target region; and
conduct a parametric evaluation of the target region at an adjusted evaluation temperature TE=Tnom+ΔTh1+ΔTh2; and
generate instructions for reporting a result of the parametric evaluation.