| CPC H01L 21/67103 (2013.01) [H01L 21/67248 (2013.01); H01L 21/6833 (2013.01); H01L 21/68785 (2013.01)] | 20 Claims |
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1. A method for controlling substrate processing, comprising:
disposing a substrate on a pedestal, wherein the pedestal comprises a plurality of heating zones, each heating zone having an independent heater;
processing the substrate according to an initial substrate processing recipe, the initial substrate processing recipe comprising one or more substrate processing steps and an initial pedestal temperature;
collecting initial substrate feedback of one or more substrate properties;
providing data representing the initial substrate feedback as a first input to a substrate control algorithm;
generating a substrate model based upon one or more modeling tests of the substrate;
providing, as a second input to the substrate control algorithm, the generated substrate model;
correcting a heater power or a heater temperature and/or a heat-exchanger/chiller temperature of one or more of the heating zones to control a targeted substrate property in one or more substrate regions, wherein the correction is calculated and performed, by a processor running the substrate control algorithm, based on the first input and the second input; and
updating the initial substrate processing recipe based upon the correction, forming an updated processing recipe.
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