US 12,438,007 B2
Staggered metal mesh on backside of device die and method forming same
Tzu-Sung Huang, Tainan (TW); Tsung-Hsien Chiang, Hsinchu (TW); Ming Hung Tseng, Toufen Township (TW); Hao-Yi Tsai, Hsinchu (TW); Yu-Hsiang Hu, Hsinchu (TW); Chih-Wei Lin, Zhubei (TW); Lipu Kris Chuang, Hsinchu (TW); Wei Lun Tsai, Kaohsiung (TW); Kai-Ming Chiang, Hsinchu (TW); Ching Yao Lin, Taichung (TW); Chao-Wei Li, Hsinchu (TW); and Ching-Hua Hsieh, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 21, 2022, as Appl. No. 17/655,645.
Claims priority of provisional application 63/278,522, filed on Nov. 12, 2021.
Prior Publication US 2023/0154764 A1, May 18, 2023
Int. Cl. H01L 23/49 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/4857 (2013.01) [H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/24 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/82 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/82005 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/92244 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first metal mesh over a carrier;
forming a first dielectric layer over the first metal mesh;
forming a second metal mesh over the first dielectric layer, wherein the first metal mesh and the second metal mesh are staggered, and wherein each of the first metal mesh and the second metal mesh comprises:
a first plurality of metal strips having first lengthwise directions parallel to each other;
a second plurality of metal strips having second lengthwise directions parallel to each other, wherein the first plurality of metal strips and the second plurality of metal strips are joined to form a continuous metal region;
forming a second dielectric layer over the second metal mesh;
attaching a device die over the second dielectric layer, wherein the device die overlaps the first metal mesh and the second metal mesh;
encapsulating the device die in an encapsulant; and
forming redistribution lines over and electrically connecting to the device die.