US 12,438,006 B2
Metal hard mask integration
Angelique Raley, Albany, NY (US); Hirokazu Aizawa, Albany, NY (US); Kaoru Maekawa, Albany, NY (US); Katie Lutker-Lee, Albany, NY (US); and Gerrit Leusink, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Apr. 12, 2022, as Appl. No. 17/718,955.
Claims priority of provisional application 63/310,434, filed on Feb. 15, 2022.
Prior Publication US 2023/0260801 A1, Aug. 17, 2023
Int. Cl. H01L 21/321 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/3212 (2013.01) [H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01L 21/67167 (2013.01); H01L 21/67184 (2013.01); H01L 21/67207 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76808 (2013.01); H01L 21/76814 (2013.01); H01L 2221/1063 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
etching a recess in the substrate using a tungsten-based metal hard mask layer as an etch mask, the substrate comprising a dielectric layer over a conductive layer, the conductive layer comprising a first conductive material, a portion of the metal hard mask layer remaining over top surfaces of the dielectric layer after the etching;
depositing a sacrificial fill over the substrate to at least partially fill the recess;
removing the remaining portion of the metal hard mask layer to expose the top surfaces, the sacrificial fill protecting the recess when removing the remaining portion of the metal hard mask layer;
thermally decomposing the sacrificial fill to remove the sacrificial fill from the recess after removing the tungsten-based metal hard mask layer, the removing of the sacrificial fill comprising exposing a portion of the conductive layer; and
depositing a second conductive material to fill the recess, the depositing of the second conductive material providing an electrical connection between the conductive layer and the second conductive material.