US 12,438,003 B2
Semiconductor structure and manufacturing method thereof
Li-Wei Chu, New Taipei (TW); Yu-Hsiang Liao, Hsinchu (TW); Hung-Hsu Chen, Tainan (TW); Chih-Wei Chang, Hsin-Chu (TW); Ming-Hsing Tsai, Chu-Pei (TW); and Ying-Chi Su, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 16, 2022, as Appl. No. 17/842,765.
Prior Publication US 2023/0411160 A1, Dec. 21, 2023
Int. Cl. H01L 21/28 (2025.01); H01L 21/285 (2006.01); H10D 62/10 (2025.01); H10D 64/64 (2025.01)
CPC H01L 21/28537 (2013.01) [H01L 21/28518 (2013.01); H10D 62/106 (2025.01); H10D 64/64 (2025.01); H10D 64/647 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor structure, comprising:
providing an epitaxial structure comprising a first material and a second material;
depositing a metal-containing structure on the epitaxial structure, the metal-containing structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer and the third metal layer comprising a first metal material, and the second metal layer comprising a second metal material, wherein the second metal layer is disposed between the first metal layer and the third metal layer; and
annealing the metal-containing structure and the epitaxial structure to form a metal silicide layer on the epitaxial structure, the metal silicide layer comprising the first material, the second material, the first metal material and the second metal material, wherein a concentration of the first metal material in the metal silicide layer varies along a thickness direction, and the concentration of the first metal material in the metal silicide layer varies along the thickness direction in a continuous manner.