US 12,438,002 B2
Semiconductor device including a field stop region
Moriz Jelinek, Villach (AT); Thomas Waechtler, Chemnitz (DE); Bernd Bitnar, Bannewitz (DE); Daniel Schloegl, Villach (AT); Hans-Joachim Schulze, Taufkirchen (DE); Oana Julia Spulber, Neubiberg (DE); Benedikt Stoib, Feldkirchen-Westerham (DE); and Christian Krueger, Liegau-Augustusbad (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jun. 10, 2022, as Appl. No. 17/837,690.
Claims priority of application No. 102021115825.7 (DE), filed on Jun. 18, 2021.
Prior Publication US 2022/0406600 A1, Dec. 22, 2022
Int. Cl. H01L 21/22 (2006.01); H01L 21/265 (2006.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 62/53 (2025.01)
CPC H01L 21/221 (2013.01) [H01L 21/26526 (2013.01); H01L 21/26586 (2013.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01); H10D 62/112 (2025.01); H10D 62/142 (2025.01); H10D 62/393 (2025.01); H10D 62/53 (2025.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an n-doped drift region arranged between a first surface and a second surface of a semiconductor body;
a p-doped first region arranged at the second surface;
an n-doped field stop region arranged between the n-doped drift region and the p-doped first region, wherein the n-doped field stop region comprises:
a first sub-region and a second sub-region, wherein a p-n junction separates the p-doped first region and the first sub-region; and
hydrogen related donors in the first sub-region and in the second sub-region,
wherein a concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value in the first sub-region, and steadily decreases from the maximum value in the first sub-region to a reference value at a first transition between the first sub-region to the second sub-region,
wherein a second vertical extent of the second sub-region ends at a second transition to the n-doped drift region where the concentration of the hydrogen related donors equals 10% of the reference value,
wherein a maximum concentration value of the hydrogen related donors in the second sub-region is at most 20% larger than the reference value, and
wherein a ratio of the maximum value in the first sub-region to the maximum concentration value of the hydrogen related donors in the second sub-region ranges from 2 to 50.