US 12,438,001 B1
Off axis laser-based surface processing operations for semiconductor wafers
Simon Bubel, Carrboro, NC (US); and Josephus Daniel Ferguson, Apex, NC (US)
Assigned to WOLFSPEED, INC., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Apr. 5, 2024, as Appl. No. 18/628,246.
Int. Cl. H01L 21/04 (2006.01); H01L 21/268 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/0475 (2013.01) [H01L 21/268 (2013.01); H01L 21/67092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for processing a surface of a semiconductor wafer comprising:
providing a semiconductor workpiece having a surface:
providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface;
imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle;
wherein the surface comprises one or more step structures relative to a c-axis basal pane for the semiconductor workpiece; and
wherein imparting relative motion between the one or more lasers and the surface comprises imparting relative motion such that the one or more lasers scan the surface at a scan angle relative to a direction associated with a length of the one or more step structures.