US 12,437,996 B2
Semiconductor patterning and resulting structures
Chun-Ming Lung, Hsinchu (TW); and ChunYao Wang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 6, 2024, as Appl. No. 18/434,121.
Application 18/434,121 is a continuation of application No. 18/072,896, filed on Dec. 1, 2022, granted, now 11,929,254.
Application 18/072,896 is a continuation of application No. 17/151,973, filed on Jan. 19, 2021, granted, now 11,521,856, issued on Dec. 6, 2022.
Claims priority of provisional application 63/085,202, filed on Sep. 30, 2020.
Prior Publication US 2024/0177995 A1, May 30, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 21/0332 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31116 (2013.01); H01L 21/32139 (2013.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); Y10S 438/947 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a material layer;
patterning the material layer, wherein patterning the material layer comprises:
depositing a first hard mask layer over the material layer;
depositing a second hard mask layer over the first hard mask layer, the second hard mask layer being denser than the first hard mask layer, the first hard mask layer and the second hard mask layer each comprising oxygen;
forming a plurality of mandrels over the second hard mask layer;
forming spacers on sidewalls of the plurality of mandrels;
removing the plurality of mandrels;
transferring a pattern of the spacers to the first hard mask layer; and
etching the material layer using the first hard mask layer as a mask.