| CPC H01L 21/0274 (2013.01) [G03F 1/24 (2013.01); G03F 7/70033 (2013.01); H01L 21/02115 (2013.01); H01L 21/02282 (2013.01); H01L 21/02304 (2013.01); H01L 21/02422 (2013.01)] | 20 Claims |
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1. A method of forming a structure, said method comprising:
providing a substrate, said substrate including one or more intermediate layers thereon, said one or more intermediate layers comprising:
a spin-on carbon layer;
a hard mask layer;
both said spin-on carbon layer and said hardmask layer, said hardmask layer being on said spin-on carbon layer; or
both said hardmask layer and said spin-on carbon layer, said spin-on carbon layer being on said hardmask layer;
forming an adhesion layer on said spin-on carbon layer or on said hardmask layer, said adhesion layer:
having an average thickness that is greater than a monolayer but less than 9 nm;
a metal content of less than about 0.001% by weight, based upon the total weight of the adhesion layer taken as 100% by weight; and
being formed from a composition comprising a component dissolved or dispersed in a solvent system, said component being chosen from:
polymers comprising monomers chosen from glycidyl acrylate, glycidyl methacrylate, 2-hydroxy-3-phenoxypropyl acrylate, hydroxy propyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxyethyl acrylate, tert-butyl methacrylate, or mixtures thereof;
styrenes;
epoxies;
novolacs;
silanes;
cyanurates;
tris(2,3-epoxypropyl)isocyanurate;
vinyl compounds grafted with a functionalized carboxylic acid moiety, a chromophore, or both;
polymers comprising a vinyl monomer grafted with a functionalized carboxylic acid moiety, a chromophore, or both; or
mixtures thereof;
forming a photoresist layer on said adhesion layer; and
subjecting at least a portion of said photoresist layer to EUV radiation.
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