US 12,437,992 B2
Method of manufacturing a semiconductor device
An-Ren Zi, Hsinchu (TW); and Ching-Yu Chang, Yuansun Village (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 30, 2021, as Appl. No. 17/246,493.
Prior Publication US 2022/0351964 A1, Nov. 3, 2022
Int. Cl. G03F 7/11 (2006.01); G03F 7/004 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/3115 (2006.01)
CPC H01L 21/0274 (2013.01) [G03F 7/0044 (2013.01); G03F 7/11 (2013.01); H01L 21/31058 (2013.01); H01L 21/3115 (2013.01)] 20 Claims
 
1. A method of manufacturing a semiconductor device, comprising:
forming a dopant layer comprising a dopant composition over a substrate,
wherein the dopant composition comprises one or more of a photoacid generator, an organic acid, an inorganic acid, an inorganic base, a crosslinker, or a surfactant;
forming a resist composition including a reaction product of an organometallic precursor and an amine, a borane, a phosphine, or water,
wherein the organometallic precursor has a formula:
MaRbXc, where: M is at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, or Lu; R is a substituted or unsubstituted alkyl, alkenyl, or carboxylate group; X is selected from the group consisting of an amino group, an alkoxy group, a carboxylate group, a halogen, and a sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5;
forming a resist layer comprising the resist composition over the dopant layer;
diffusing a dopant from the dopant composition in the dopant layer into the resist layer; and
forming a pattern in the resist layer.