US 12,437,991 B2
Wafer processing method
Nuo-Wei Luo, Singapore (SG)
Assigned to UNITED MICROELECTRONICS CORPORATION, Hsinchu (TW)
Filed by UNITED MICROELECTRONICS CORPORATION, Hsinchu (TW)
Filed on Dec. 27, 2021, as Appl. No. 17/562,045.
Claims priority of application No. 202111387024.3 (CN), filed on Nov. 22, 2021.
Prior Publication US 2023/0162979 A1, May 25, 2023
Int. Cl. G03F 7/16 (2006.01); H01L 21/027 (2006.01)
CPC H01L 21/027 (2013.01) [G03F 7/168 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A wafer processing method, comprising the following steps in sequence:
providing a wafer, wherein the wafer has a first position and a second position, and the first position faces the second position in a reference direction;
coating a photoresist liquid on the wafer; and
performing a heating process to heat the wafer coated with the photoresist liquid to form a photoresist layer on the wafer,
wherein during the heating process, a temperature of the wafer gradually increases in the reference direction, so that a thickness of the photoresist layer gradually decreases in the reference direction,
wherein a distance between the first position and the second position is equal to a diameter of the wafer, the reference direction is a diameter direction of the wafer, and the temperature of the wafer gradually increases from the first position on an edge of the wafer to the second position on another edge of the wafer along the diameter direction, so that the thickness of the photoresist layer gradually decreases from the first position to the second position of the wafer along the diameter direction.