US 12,437,990 B2
Semiconductor device and method of manufacture
Wei-Min Liu, Hsinchu (TW); Li-Li Su, Chubei (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 23, 2021, as Appl. No. 17/238,808.
Prior Publication US 2022/0344151 A1, Oct. 27, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/08 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01); C30B 25/10 (2006.01); C30B 25/14 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01); H01J 37/05 (2006.01); H01J 37/32 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H01L 21/0262 (2013.01) [C23C 16/0227 (2013.01); C23C 16/08 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01); C30B 25/105 (2013.01); C30B 25/14 (2013.01); C30B 25/186 (2013.01); C30B 29/52 (2013.01); H01J 37/05 (2013.01); H01J 37/3244 (2013.01); H01L 21/02532 (2013.01); H01L 21/02661 (2013.01); H01L 21/28088 (2013.01); H01L 21/3065 (2013.01); H10D 30/024 (2025.01); H10D 30/43 (2025.01); H10D 30/6211 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/701 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/118 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01); H10D 64/017 (2025.01); H10D 84/017 (2025.01); H10D 84/0177 (2025.01); H10D 84/0184 (2025.01); H10D 84/0186 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H01J 2237/3321 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region comprising a first element and a second element;
converting a second precursor into first radicals and first ions;
separating the first radicals from the first ions;
flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region; and
after flowing the first radicals, flowing third precursors over the epitaxial region.