US 12,437,989 B2
Method for depositing a silicon germanium layer on a substrate
Lucas Becker, Simbach (DE); and Peter Storck, Burghausen (DE)
Assigned to SILTRONIC AG, Munich (DE)
Appl. No. 18/022,177
Filed by Siltronic AG, Munich (DE)
PCT Filed Aug. 18, 2021, PCT No. PCT/EP2021/072926
§ 371(c)(1), (2) Date Feb. 20, 2023,
PCT Pub. No. WO2022/048908, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 20194591 (EP), filed on Sep. 4, 2020.
Prior Publication US 2023/0326750 A1, Oct. 12, 2023
Int. Cl. H01L 21/20 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/06 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01); H01L 21/02 (2006.01); H01L 21/36 (2006.01)
CPC H01L 21/02532 (2013.01) [C23C 16/029 (2013.01); C23C 16/042 (2013.01); C23C 16/06 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); C30B 29/52 (2013.01); H01L 21/02381 (2013.01); H01L 21/02639 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for heteroepitaxially depositing a silicon germanium layer on a substrate, the silicon germanium layer having a composition Si1-xGex, wherein 0.01≤x≤1, and the substrate being a silicon single crystal wafer or a silicon-on-insulator wafer, the method comprising:
providing a mask layer atop the substrate;
removing the mask layer in an edge region of the substrate to provide access to an annular-shaped free surface of the substrate in the edge region of the substrate surrounding a remainder of the mask layer;
depositing an edge reservoir consisting of a relaxed or partially relaxed silicon germanium layer atop the annular-shaped free surface of the substrate;
removing the remainder of the mask layer; and
depositing the silicon germanium layer atop the substrate and atop the edge reservoir, the silicon germanium layer contacting an inner lateral surface of the edge reservoir.