| CPC H01L 21/02123 (2013.01) [C23C 16/455 (2013.01); C23C 16/4584 (2013.01); H01L 21/67161 (2013.01)] | 22 Claims |
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1. A processing method comprising:
providing a substrate in a process chamber; and
forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, supplying an inert gas from a third supplier, supplying a second processing gas from a fourth supplier to the substrate, and exhausting the first processing gas, the inert gas from the first supplier, the inert gas from the third supplier, and the second processing gas via an exhaust port that is installed to face the second supplier while the substrate is interposed between the second supplier and the exhaust port in a plane view,
wherein the third supplier is installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and the substrate, the straight line being interposed between the first supplier and the third supplier, wherein the first supplier, the second supplier and the third supplier are parallel to each other, and
wherein in the forming a film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.
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