US 12,437,985 B2
Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
Shunpei Yamazaki, Setagaya (JP); Masataka Sato, Tochigi (JP); Satoru Idojiri, Tochigi (JP); and Natsuko Takase, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Apr. 21, 2023, as Appl. No. 18/137,553.
Application 18/137,553 is a continuation of application No. 16/332,546, granted, now 11,637,009, previously published as PCT/IB2017/055991, filed on Sep. 29, 2017.
Claims priority of application No. 2016-198925 (JP), filed on Oct. 7, 2016.
Prior Publication US 2023/0260778 A1, Aug. 17, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); B23K 26/38 (2014.01)
CPC H01L 21/02041 (2013.01) [H01L 21/304 (2013.01); H01L 21/30604 (2013.01); B23K 26/38 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method for manufacturing a display device, comprising:
a step of forming a stack and a metal oxide layer over a first formation substrate;
a step of irradiating the stack with laser light through the first formation substrate;
a step of separating the stack and the metal oxide layer; and
a step of attaching a first substrate including a flexible material to a surface of the stack where the metal oxide layer is separated,
wherein the stack comprises a layer comprising a transistor and a light-emitting device, and a resin layer between the layer and the first formation substrate, and
wherein a focus of the laser light is at an interface between the resin layer and the metal oxide layer or a vicinity thereof.