US 12,437,977 B2
Method for etching lithium niobate and method for forming lithium niobate pattern using the same
Ho Joong Jung, Seoul (KR); Sang Wook Han, Seoul (KR); Hyung Jun Heo, Seoul (KR); Hansuek Lee, Daejeon (KR); Min Kyo Seo, Daejeon (KR); and Hyeon Hwang, Daejeon (KR)
Assigned to KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul (KR); and KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR)
Filed by Korea Institute of Science and Technology, Seoul (KR); and KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR)
Filed on Feb. 27, 2023, as Appl. No. 18/114,295.
Claims priority of application No. 10-2022-0036633 (KR), filed on Mar. 24, 2022; and application No. 10-2022-0042690 (KR), filed on Apr. 6, 2022.
Prior Publication US 2023/0307214 A1, Sep. 28, 2023
Int. Cl. H01J 37/32 (2006.01); B08B 3/08 (2006.01); G03F 7/20 (2006.01)
CPC H01J 37/32825 (2013.01) [B08B 3/08 (2013.01); G03F 7/2026 (2013.01); H01J 37/32449 (2013.01); H01J 37/3266 (2013.01); H01J 2237/022 (2013.01); H01J 2237/182 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3343 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for etching lithium niobate, the method comprising:
a process of etching lithium niobate using a mask pattern, as a physical dry etching method using Ar plasma produced in a chamber through Ar gas,
wherein in the process of etching lithium niobate, a process pressure of the chamber is maintained at 1 mTorr to 20 mTorr, and
a process of forming a mask pattern on the lithium niobate, wherein the forming of the mask pattern comprises:
a process of forming an adhesive film on the lithium niobate;
a process of spin-coating an HSQ resist on the adhesive film;
a process of forming a conductive layer by spin-coating a conductive layer solution on the HSQ resist:
a process of patterning the conductive layer and the HSQ resist; and
a process of developing the conductive layer and the HSQ resist.