US 12,437,972 B2
Plasma processing apparatus
Masaki Hirayama, Fuchu (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 12, 2024, as Appl. No. 18/411,533.
Claims priority of application No. 2023-005800 (JP), filed on Jan. 18, 2023.
Prior Publication US 2024/0242937 A1, Jul. 18, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32256 (2013.01) [H01J 37/32229 (2013.01); H01J 2237/327 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a chamber configured to provide a processing space in the chamber;
a substrate support provided inside the processing space;
an upper electrode provided above the substrate support with the processing space interposed between the upper electrode and the substrate support;
an emitter provided to emit electromagnetic waves into a plasma generation space and extending in a circumferential direction around a central axis of the chamber and the processing space; and
a waveguide configured to supply the electromagnetic waves to the emitter,
wherein the waveguide includes a resonator configured to provide a waveguide path,
wherein the resonator includes a first short-circuiting portion constituting a first end of the waveguide path of the resonator and a second short-circuiting portion constituting a second end of the waveguide path of the resonator,
wherein the second end of the waveguide path of the resonator is electromagnetically coupled to the emitter, and
wherein the second short-circuiting portion has a capacitance that short-circuits the waveguide path at a frequency of the electromagnetic waves.