US 12,437,970 B2
Plasma processing method and plasma processing apparatus
Chishio Koshimizu, Miyagi (JP); Shin Hirotsu, Miyagi (JP); Takenobu Ikeda, Miyagi (JP); Koichi Nagami, Miyagi (JP); and Shinji Himori, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 10, 2023, as Appl. No. 18/448,077.
Application 18/448,077 is a continuation of application No. 16/878,098, filed on May 19, 2020, granted, now 11,764,034.
Claims priority of application No. 2019-099249 (JP), filed on May 28, 2019.
Prior Publication US 2024/0006154 A1, Jan. 4, 2024
Int. Cl. H01J 37/32 (2006.01); H01H 1/46 (2006.01); H05H 1/00 (2006.01)
CPC H01J 37/32183 (2013.01) [H01H 1/46 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H05H 1/01 (2021.05)] 15 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber;
a first DC power source configured to generate a first DC voltage having a first voltage level;
a second DC power source configured to generate a second DC voltage having a second voltage level different from the first voltage level, the second DC voltage having a same polarity as a polarity of the first DC voltage;
a first switch configured to switch between a first conduction state and a first non-conduction state, the substrate support being connected to the first DC power source in the first conduction state and disconnected from the first DC power source in the first non-conduction state;
a second switch configured to switch between a second conduction state and a second non-conduction state, the substrate support being connected to the second DC power source in the second conduction state and disconnected from the second DC power source in the second non-conduction state;
a third switch configured to switch between a third conduction state and a third non-conduction state, the substrate support being connected to a reference potential in the third conduction state and disconnected from the reference potential in the third non-conduction state; and
a controller configured to cause:
the first conduction state of the first switch and the second non-conduction state of the second switch during a first period of a repeating sequence; and
the first non-conduction state of the first switch and the second conduction state of the second switch during a second period of the repeating sequence,
wherein the controller is configured to control the first switch, the second switch and the third switch to cause:
the first conduction state, the second non-conduction state and the third non-conduction state during the first period of the repeating sequence;
the first non-conduction state, the second conduction state and the third non-conduction state during the second period of the repeating sequence; and
the first non-conduction state, the second non-conduction state and the third conduction state during a third period of the repeating sequence between the first period and the second period.