US 12,437,969 B2
Plasma processing equipment
Seung Bo Shim, Seoul (KR); Doug Yong Sung, Seoul (KR); Young Jin Noh, Ansan-si (KR); Yong Woo Lee, Hwaseong-si (KR); Ji Soo Im, Seongnam-si (KR); Hyeong Mo Kang, Hwaseong-si (KR); Peter Byung H Han, Suwon-si (KR); Cheon Kyu Lee, Hwaseong-si (KR); and Masato Horiguchi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 25, 2022, as Appl. No. 17/972,798.
Application 17/972,798 is a division of application No. 16/361,341, filed on Mar. 22, 2019, granted, now 11,501,953.
Claims priority of application No. 10-2018-0035975 (KR), filed on Mar. 28, 2018; and application No. 10-2019-0001053 (KR), filed on Jan. 4, 2019.
Prior Publication US 2023/0044703 A1, Feb. 9, 2023
Int. Cl. H01L 21/00 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H03H 7/01 (2006.01); H03H 7/38 (2006.01)
CPC H01J 37/32183 (2013.01) [H01J 37/32091 (2013.01); H01J 37/32642 (2013.01); H01J 37/32724 (2013.01); H01L 21/67069 (2013.01); H01L 21/6833 (2013.01); H03H 7/0115 (2013.01); H03H 7/38 (2013.01); H01J 2237/002 (2013.01); H01J 2237/3347 (2013.01)] 14 Claims
OG exemplary drawing
 
1. Plasma processing equipment comprising:
a chuck stage having an upper surface dedicated to support a substrate thereon;
a lower electrode disposed under the chuck stage;
an upper electrode disposed over the chuck stage;
an AC power supply configured to produce a first signal, a second signal and a third signal of respective frequencies different from each other and operatively connected to the upper electrode or the lower electrode;
a dielectric ring extending around the chuck stage;
an edge electrode located inside the dielectric ring;
a resonance circuit connected to the edge electrode and configured to selectively allow only the third signal among the first, second and third signals to pass;
a cooling thermal pad on an upper surface of the dielectric ring;
a first cooling channel on an upper surface of the cooling thermal pad with a first inlet and a first outlet and containing a first refrigerant; and
a second cooling channel on the upper surface of the cooling thermal pad with a second inlet and a second outlet and containing a second refrigerant,
wherein the first and second cooling channels are thermally coupled to the upper surface of the dielectric ring and the edge electrode, and
wherein the first cooling channel and the second cooling channel are configured to independently circulate the first refrigerant and the second refrigerant, respectively.