US 12,437,968 B2
Plasma processing apparatus and plasma processing method
Takayuki Tokunaga, Tokyo (JP); Mitsuhiro Jomura, Tokyo (JP); and Michikazu Morimoto, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Appl. No. 17/435,147
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Sep. 2, 2020, PCT No. PCT/JP2020/033301
§ 371(c)(1), (2) Date Aug. 31, 2021,
PCT Pub. No. WO2022/049677, PCT Pub. Date Mar. 10, 2022.
Prior Publication US 2023/0187174 A1, Jun. 15, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/32165 (2013.01) [H01L 21/3065 (2013.01); H01J 37/32816 (2013.01); H01J 2237/182 (2013.01); H01J 2237/334 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing chamber in which a sample is plasma-processed;
a radio frequency power supply configured to supply a radio frequency power for generating plasma;
a first radio frequency power supply configured to supply, to a sample stage on which the sample is placed, a first radio frequency power;
a second radio frequency power supply configured to supply, to the sample stage, a second radio frequency power having a frequency higher than a frequency of the first radio frequency power; and
a control device configured to control the first radio frequency power supply and the second radio frequency power supply such that the supply of one radio frequency power is stopped while the other radio frequency power is supplied, wherein
the frequency of the first radio frequency power and the frequency of the second radio frequency power are defined based on a full width at half maximum of a peak value of an ion energy distribution with respect to the frequency.