US 12,437,964 B2
Light-emitting body, electron beam detector, and scanning electron microscope
Junya Maeda, Hamamatsu (JP); Kyogo Kaneko, Hamamatsu (JP); and Kuniyoshi Yamauchi, Hamamatsu (JP)
Assigned to HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
Appl. No. 17/775,993
Filed by HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
PCT Filed Nov. 30, 2020, PCT No. PCT/JP2020/044496
§ 371(c)(1), (2) Date May 11, 2022,
PCT Pub. No. WO2021/145078, PCT Pub. Date Jul. 22, 2021.
Claims priority of application No. 2020-006121 (JP), filed on Jan. 17, 2020.
Prior Publication US 2022/0392740 A1, Dec. 8, 2022
Int. Cl. H01J 37/244 (2006.01); H01J 37/18 (2006.01); H01J 37/28 (2006.01)
CPC H01J 37/244 (2013.01) [H01J 37/18 (2013.01); H01J 37/28 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A light emitter for converting incident electrons into light, the light emitter comprising:
a multiple quantum well structure having a configuration in which a plurality of well layers and a plurality of barrier layers are alternately laminated and configured to generate the light by incidence of the electrons; and
an electron incident surface provided on the multiple quantum well structure, wherein
when the electrons are incident on the multiple quantum well structure from the electron incident surface side, the light is generated by cathodoluminescence in the plurality of well layers,
the plurality of barrier layers constituting the multiple quantum well structure include a first barrier layer, and a second barrier layer located on the electron incident surface side with respect to the first barrier layer, and
the second barrier layer is a barrier layer closest to the electron incident surface in the plurality of barrier layers, and the first barrier layer is thicker than the second barrier layer, and
a thickness difference between the barrier layers adjacent to each other decreases as a distance from the electron incident surface increases.