US 12,437,933 B2
Controlled heating rate baking protocol for the synthesis of bismuth vanadate thin films
Ruiqin Zhang, Kowloon (HK); and Rafiqat Ui Rasool, Kowloon (HK)
Assigned to City University of Hong Kong, Kowloon (HK)
Filed by City University of Hong Kong, Kowloon (HK)
Filed on Mar. 1, 2023, as Appl. No. 18/176,786.
Claims priority of provisional application 63/315,575, filed on Mar. 2, 2022.
Prior Publication US 2023/0282424 A1, Sep. 7, 2023
Int. Cl. H01G 9/00 (2006.01); H01G 9/20 (2006.01); C23C 18/12 (2006.01)
CPC H01G 9/0029 (2013.01) [H01G 9/2004 (2013.01); C23C 18/1254 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for fabricating a film on a substrate comprising the steps of,
(a) providing a sol precursor, wherein the sol precursor is a viscosity enhanced solution;
(b) providing a substrate;
(c) depositing the sol precursor onto the substrate via a sol-gel technique comprising a single-coating step;
(d) annealing, without first drying, the deposited sol precursor under ambient pressure at a controlled heating rate in a muffle furnace at a temperature of from about 400° C. to about 500° C., wherein the controlled heating rate is from about 30° C./min to about 70° C./min; and
(e) cooling down the sol precursor to form the film.