US 12,437,824 B2
Configuration method and reading method of 3D memory device, 3D memory device, and memory system
Hongtao Liu, Wuhan (CN); Songmin Jiang, Wuhan (CN); and Dejia Huang, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 28, 2022, as Appl. No. 18/090,423.
Application 18/090,423 is a continuation of application No. PCT/CN2021/143360, filed on Dec. 30, 2021.
Claims priority of application No. 202110054084.7 (CN), filed on Jan. 15, 2021.
Prior Publication US 2023/0148136 A1, May 11, 2023
Int. Cl. G11C 29/12 (2006.01)
CPC G11C 29/1201 (2013.01) [G11C 29/12005 (2013.01); G11C 2029/1202 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for configurating a memory device, comprising:
writing test data into a plurality of selected memory cells corresponding to a selected word line in one of a plurality of memory blocks of the memory device;
determining threshold voltages of the plurality of selected memory cells; and
obtaining a relationship table indicating a corresponding relationship between a plurality of numbers Ncell and a plurality of voltages Vpass,
wherein each Ncell indicates a number of a subset of the plurality of selected memory cells that have threshold voltages lower than a preset voltage, and each Vpass indicates a pass voltage required to be applied on non-selected word lines for performing a read operation on the one of the plurality of memory blocks.