US 12,437,823 B2
Memory device and reading method thereof
You-Liang Chou, Taichung (TW); Wen-Jer Tsai, Hualien (TW); and Chun-Chang Lu, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Nov. 27, 2023, as Appl. No. 18/519,201.
Claims priority of provisional application 63/464,204, filed on May 5, 2023.
Prior Publication US 2024/0371456 A1, Nov. 7, 2024
Int. Cl. G11C 29/02 (2006.01); G11C 8/08 (2006.01); G11C 29/52 (2006.01)
CPC G11C 29/022 (2013.01) [G11C 8/08 (2013.01); G11C 29/52 (2013.01); G11C 29/021 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A reading method of a memory device, wherein the memory device at least includes a first word line, a second word line and a third word line, the second word line and the third word line are adjacent to the first word line, and the reading method comprises:
executing a read procedure, to read a plurality of memory cells connected to the first word line, wherein the read procedure includes:
applying a first read voltage to the first word line; and
applying a first pass voltage to the second word line and the third word line, when the first read voltage is applied to the first word line; and
executing a recognition procedure in response to at least one memory cell of the plurality of memory cells has a read error, wherein the recognition procedure includes:
applying the first pass voltage to the first word line; and
applying a recognition voltage to at least one of the second word line and the third word line, when the first pass voltage is applied to the first word line; and
executing a re-read procedure including:
applying a second read voltage to the first word line; and
applying a second pass voltage to the second word line and a third pass voltage to the third word line, when the second read voltage is applied to the first word line.