US 12,437,822 B2
Memory device and reading method thereof
You-Liang Chou, Taichung (TW); Wen-Jer Tsai, Hualien (TW); and Chun-Chang Lu, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Aug. 30, 2023, as Appl. No. 18/458,201.
Claims priority of provisional application 63/464,203, filed on May 5, 2023.
Prior Publication US 2024/0371455 A1, Nov. 7, 2024
Int. Cl. G11C 29/02 (2006.01); G11C 8/08 (2006.01); G11C 29/52 (2006.01)
CPC G11C 29/022 (2013.01) [G11C 8/08 (2013.01); G11C 29/52 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A reading method of a memory device, wherein the memory device at least includes a first word line, a second word line and a third word line, the second word line and the third word line are adjacent to the first word line, and the reading method comprises:
executing a read procedure to read a plurality of memory cells connected to the first word line, wherein the read procedure includes:
applying a read voltage to the first word line; and
applying a first pass voltage to the second word line and the third word line, when applying the read voltage to the first word line; and
executing a re-read procedure for some of the memory cells belonging to a state marginal group when a read error occurs, wherein the re-read procedure includes:
applying the read voltage to the first word line;
applying a second pass voltage to the second word line, when applying the read voltage to the first word line, wherein the second pass voltage is different from the first pass voltage, and the second pass voltage equals the first pass voltage plus an adjusting voltage such that the second pass voltage is greater than the first pass voltage; and
applying a third pass voltage to the third word line, when applying the read voltage to the first word line, wherein the third pass voltage is different from the first pass voltage.