US 12,437,816 B2
Memory, a memory system, and a method for operating memory
Xiangnan Zhao, Wuhan (CN); Hongtao Liu, Wuhan (CN); Chenhui Li, Wuhan (CN); Lei Jin, Wuhan (CN); and Hua Tan, Wuhan (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 4, 2023, as Appl. No. 18/528,454.
Claims priority of application No. 202310843938.9 (CN), filed on Jul. 10, 2023.
Prior Publication US 2025/0022519 A1, Jan. 16, 2025
Int. Cl. G11C 16/28 (2006.01); G06F 12/02 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/28 (2013.01) [G06F 12/0246 (2013.01); G11C 16/0483 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for operating a memory, comprising:
determining a storage state of a reference memory cell;
determining a discharge duration of a sensing node corresponding to a target memory cell based on the storage state of the reference memory cell; and
reading the target memory cell based on the discharge duration of the sensing node corresponding to the target memory cell to obtain read results;
wherein the target memory cell and the reference memory cell are located in a same string and are adjacent, and programming order of the reference memory cell is after that of the target memory cell.