US 12,437,811 B2
Erase algorithm with a weak program pulse for non-volatile memory
Zhi Li, Santa Clara, CA (US); Sung Hyun Jo, Sunnyvale, CA (US); and Jordan Frick, San Jose, CA (US)
Assigned to Crossbar, Inc., Santa Clara, CA (US)
Filed by Crossbar, Inc., Santa Clara, CA (US)
Filed on Mar. 8, 2023, as Appl. No. 18/119,104.
Prior Publication US 2024/0304243 A1, Sep. 12, 2024
Int. Cl. G11C 13/00 (2006.01)
CPC G11C 13/0097 (2013.01) [G11C 13/0033 (2013.01); G11C 13/004 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for reducing bit disturb associated with erasing memory cells of a non-volatile two-terminal resistive switching memory device, comprising:
implementing a program process on a plurality of non-volatile memory cells of an array of non-volatile two-terminal resistive switching memory cells, the plurality comprising a first non-volatile memory cell and a second non-volatile memory cell;
performing a first erase-verify process on the first and second non-volatile memory cells, further comprising:
applying an erase process to the first and second non-volatile memory cells, and
reading the first and second non-volatile memory cells to determine whether both memory cells are in an erase state;
in response to determining both memory cells are in the erase state, performing a first weak program process on the first and second non-volatile memory cells, wherein the first weak program process comprises at least one of:
a lower pulse count than the program process,
a lower voltage magnitude than the program process, or
a lower pulse duration than the program process;
performing a second erase-verify process on the first and second non-volatile memory cells, further comprising:
applying the erase process to the first and second non-volatile memory cells, and
reading the first and second non-volatile memory cells to determine whether both memory cells are in the erase state; and
perform a final read process to determine both the first and second non-volatile memory cells are in the erase state.