US 12,437,798 B2
Voltage regulator and memory device
Chih-Jen Chen, Kaohsiung (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Sep. 1, 2023, as Appl. No. 18/459,453.
Prior Publication US 2025/0078901 A1, Mar. 6, 2025
Int. Cl. G11C 5/14 (2006.01); G11C 11/4074 (2006.01)
CPC G11C 11/4074 (2013.01) [G11C 5/146 (2013.01); G11C 5/147 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A voltage regulator, comprising:
a voltage generator generating a target voltage for a driving circuit configured to drive a memory cell array in a memory device, wherein the voltage generator adjusts a bias current of the voltage generator based on a bias voltage, and the bias current affects a slew rate of the target voltage; and
a bias circuit coupled to the voltage generator to provide the bias voltage, wherein the bias circuit dynamically adjusts the bias voltage based on a power saving mode signal of the memory device, and the bias circuit comprises:
a variable resistor circuit controlled by the power saving mode signal, wherein the variable resistor circuit dynamically adjusts a master bias current flowing through the variable resistor circuit based on the power saving mode signal; and
a conversion circuit coupled to the variable resistor circuit, wherein the conversion circuit converts the master bias current into the bias voltage.