US 12,437,797 B2
Memory device and precharging method thereof
Seungki Hong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 14, 2023, as Appl. No. 18/368,446.
Application 18/368,446 is a continuation in part of application No. 18/118,235, filed on Mar. 7, 2023, granted, now 12,198,751.
Claims priority of application No. 10-2022-0116930 (KR), filed on Sep. 16, 2022.
Prior Publication US 2024/0096396 A1, Mar. 21, 2024
Int. Cl. G11C 11/56 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01)
CPC G11C 11/4074 (2013.01) [G11C 11/40615 (2013.01); G11C 11/4087 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory cell array comprising a plurality of rows;
a row decoder configured to select a row to be activated from among the plurality of rows based on a decoded row address; and
an interface circuit configured to:
generate the decoded row address based on decoding a plurality of bits of a row address,
transfer the decoded row address to the row decoder, and
in an idle non-power-down mode of the memory device, precharge the decoded row address that is transferred to the row decoder in response to a predetermined condition being satisfied.