| CPC G11C 11/2257 (2013.01) [G11C 11/2273 (2013.01); G11C 11/2293 (2013.01)] | 18 Claims |
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1. A method for driving a semiconductor device comprising a memory cell comprising a ferroelectric capacitor, comprising:
writing binary data to the memory cell in a first period;
reading the binary data from the memory cell in a second period; and
generating a polarization reversal in the ferroelectric capacitor in a third period, so that the binary data is returned to the memory cell,
wherein the memory cell comprises a first transistor, a second transistor, and a third transistor,
wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and one electrode of the ferroelectric capacitor,
wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,
wherein the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor,
wherein in the first period and the third period, the first transistor is in an on state and the third transistor is in an off state, and
wherein in the second period, the first transistor is in an off state and the third transistor is in an on state.
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