US 12,437,791 B2
Magneto resistive memory for monolithic data processing
Romney R. Katti, Shorewood, MN (US)
Assigned to Honeywell International Inc., Charlotte, NC (US)
Filed by Honeywell International Inc., Charlotte, NC (US)
Filed on Jul. 11, 2023, as Appl. No. 18/350,372.
Prior Publication US 2025/0022497 A1, Jan. 16, 2025
Int. Cl. G11C 11/00 (2006.01); G11C 11/16 (2006.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising a single die, the single die including:
a first set of one or more magnetic tunnel junction (MTJ) elements comprising a first anisotropy based on a first shape of a free layer of a first MTJ element of the first set of one or more MTJ elements that results in the first set of one or more MTJ elements being configured to perform a first write operation at a first write speed;
a second set of one or more MTJ elements comprising a second anisotropy based on a second shape of a free layer of a second MTJ element of the second set of one or more MTJ elements that results in the second set of one or more MTJ elements being configured to perform a second write operation at a second write speed different from the first write speed, wherein the second shape is different from the first shape; and
processing circuitry configured to cache data at the first set of one or more MTJ elements for short-term storage and to store data at the second set of one or more MTJ elements for long-term storage.