US 12,437,790 B2
Semiconductor structure and manufacturing method thereof
Hung-Chan Lin, Tainan (TW); Yu-Ping Wang, Hsinchu (TW); and Chien-Ting Lin, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Dec. 12, 2021, as Appl. No. 17/548,583.
Claims priority of application No. 202111359108.6 (CN), filed on Nov. 17, 2021.
Prior Publication US 2023/0154514 A1, May 18, 2023
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
A MTJ(magnetic tunneling junction) stacked structure arranged on a substrate;
A SOT(spin orbit torque) layer disposed above the MTJ stacked structure, Wherein the SOT layer comprises a first part with a thick thickness and two second Parts with a thin thickness, and wherein the MTJ stacked structure is disposed Between the substrate and the SOT layer, wherein a top surface of the first part and top surfaces of the second parts of the SOT layer are aligned with each other, wherein
The first part and two second parts of the SOT layer together form an upright t-shape, and
A first contact structure above and electrically connected to a first part of the second parts, a second contact structure above and electrically connected to a second part of the second parts, wherein the first contact structure electrically connects the SOT layer to a first interconnect structure, the second contact structure electrically connects the SOT layer to a second interconnect structure, wherein the first interconnect structure is located at a lateral side of the SOT layer, and the second interconnect structure is located at a second lateral side of the SOT layer opposite the first lateral side, wherein
A lower surface of the MTJ stacked structure is electrically connected to a first conductive structure, a lower surface of the first interconnect structure is electrically connected to a second conductive structure, and a lower surface of the second interconnect structure is electrically connected to a third conductive structure.