US 12,437,787 B2
Threshold compensated detector for memory sense
Ferdinando Bedeschi, Biassono (IT); Umberto Di Vincenzo, Capriate San Gervasio (IT); and Michele Maria Venturini, Milan (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 22, 2023, as Appl. No. 18/518,126.
Claims priority of provisional application 63/435,498, filed on Dec. 27, 2022.
Prior Publication US 2024/0212752 A1, Jun. 27, 2024
Int. Cl. G11C 7/06 (2006.01)
CPC G11C 7/067 (2013.01) 20 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a detection circuit configured to receive an input signal indicative of a data state and to detect the data state, the detection circuit including:
a power supply voltage node to receive a power supply voltage;
a reference node to provide a power supply reference level; and
charge sharing circuitry including:
a first capacitor having a first terminal and a second terminal;
a first switch coupled between the power supply voltage node and the first terminal of the first capacitor, the first switch configured to receive a first switch signal and to be driven by first switch signal to charge the first capacitor;
a second capacitor having a first terminal and a second terminal, the second terminal of the second capacitor coupled to the reference node;
a second switch coupled between the first terminal of the second capacitor and the reference node, the second switch configured to receive a second switch signal and to be driven by the second switch signal to discharge the second capacitor; and
a third switch coupled between the first terminal of the first capacitor and the first terminal of the second capacitor, the third switch configured to be driven by the input signal to detect the data state using charge sharing between the first capacitor and the second capacitor,
wherein a voltage at the first terminal of the second capacitor is indicative of the data state.