US 12,437,136 B2
Method for intra-cell-repurposing dummy transistors and semiconductor device having repurposed formerly dummy transistors
Yiyun Huang, Hsinchu (TW); Zhang-Ying Yan, Hsinchu (TW); Liu Han, Hsinchu (TW); and Qingchao Meng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC NANJING COMPANY, LIMITED, Nanjing (CN)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC NANJING COMPANY, LIMITED, Nanjing (CN)
Filed on May 12, 2022, as Appl. No. 17/743,374.
Claims priority of application No. 202210445466.7 (CN), filed on Apr. 26, 2022.
Prior Publication US 2023/0342533 A1, Oct. 26, 2023
Int. Cl. G06F 30/392 (2020.01); G06F 30/33 (2020.01); G06F 111/20 (2020.01); G06F 119/06 (2020.01); G06F 119/18 (2020.01)
CPC G06F 30/392 (2020.01) [G06F 30/33 (2020.01); G06F 2111/20 (2020.01); G06F 2119/06 (2020.01); G06F 2119/18 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming an active circuit of a cell, wherein forming the active circuit comprises:
forming source/drain (S/D) regions including doping first areas of an active regions, the S/D regions representing first transistor components, wherein second areas of the active regions which are between corresponding S/D regions are channel regions representing second transistor components;
identifying a dummy device within the cell, wherein the dummy device is disconnected from the active circuit within the cell; and
connecting the dummy device to a target node of the active circuit.