| CPC G06F 12/0246 (2013.01) [G06F 12/0238 (2013.01); G06F 2212/202 (2013.01); G06F 2212/403 (2013.01); G06F 2212/7205 (2013.01)] | 18 Claims |
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1. A nonvolatile memory, comprising:
a memory cell array including a plurality of memory cells; and
a command processing unit configured to control writing and reading to and from the memory cell array according to a command received from a controller outside of the nonvolatile memory, the command processing unit including a buffer, wherein
the command processing unit is configured to:
store first data based on data read from a first position of the memory cell array in the buffer in response to a first command from the controller, the first command specifying the first position of the memory cell array,
store second data based on data read from a second position of the memory cell array in the buffer in response to a second command from the controller, the second command specifying the second position of the memory cell array,
transmit first validity determination information for the first data and second validity determination information for the second data to the controller, the first validity determination information indicating whether or not the first data is valid, the second validity determination information indicating whether or not the second data is valid, and
write third data based on the second data that has been stored in the buffer to a third position of the memory cell array in response to a third command from the controller, the third command specifying validity determination information corresponding to the second data.
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